| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 17 mΩ |
| Polarity | Dual P-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 0.9 V |
| Drain to Source Voltage (Vds) | 12 V |
| Breakdown Voltage (Drain to Source) | 12 V |
| Continuous Drain Current (Ids) | 9.2A |
| Rise Time | 8.6 ns |
| Input Capacitance (Ciss) | 3450pF @10V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 260 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IRF7329TRPBF Series 12 V 9.2 A 17 mOhm SMT Hexfet Power Mosfet - SOIC-8
Infineon
9 Pages / 0.16 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
3 Pages / 0.14 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
-12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
International Rectifier
MOSFET 2P-CH 12V 9.2A 8-SOIC
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