| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 4.70 A |
| Case/Package | SOIC |
| Power Dissipation | 2 W |
| Part Family | IRF7341 |
| Drain to Source Voltage (Vds) | 55.0 V |
| Continuous Drain Current (Ids) | 4.70 A |
| Rise Time | 3.20 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
●extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and
●ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●l Generation V Technology
●l Ultra Low On-Resistance
●l Dual N-Channel Mosfet
●l Surface Mount
●l Available in Tape & Reel
●l Dynamic dv/dt Rating
●l Fast Switching
International Rectifier
7 Pages / 0.1 MByte
International Rectifier
9 Pages / 0.15 MByte
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