TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.05 Ω |
Polarity | N-CH |
Power Dissipation | 2 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 55 V |
Continuous Drain Current (Ids) | 4.7A |
Rise Time | 3.2 ns |
Input Capacitance (Ciss) | 740pF @25V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 13 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7341PBF is a 55V dual N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Surface mount
● Dynamic dV/dt rating
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