IRF7341Q Datasheet PDF - International Rectifier

Description

●Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety

●Benefits

●•  Advanced Process Technology

●•  Dual N-Channel MOSFET

●•  Ultra Low On-Resistance

●•  175°C Operating Temperature

●•  Repetitive Avalanche Allowed up to Tjmax

●•  Automotive [Q101] Qualified

●Typical Applications

●•  Anti-lock Braking Systems (ABS)

●•  Electronic Fuel Injection

●• Air bag