| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC |
| Polarity | Dual N-Channel |
| Power Dissipation | 2.4 W |
| Part Family | IRF7341Q |
| Drain to Source Voltage (Vds) | 55.0 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 5.10 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Description
●These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
●Benefits
●• Advanced Process Technology
●• Dual N-Channel MOSFET
●• Ultra Low On-Resistance
●• 175°C Operating Temperature
●• Repetitive Avalanche Allowed up to Tjmax
●• Lead-Free
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