| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.105 Ω |
| Polarity | P-CH |
| Power Dissipation | 2 W |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 3.4A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 690pF @25V(Vds) |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7342D2PBF is a dual P-channel MOSFET offers the designer an innovative board space saving solution for switching regulator applications. HEXFETs utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. Combining this technology with low forward drop Schottky rectifier"s results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The package has been modified through a customized lead-frame for enhanced thermal characteristics and designed for vapour phase, infrared or wave soldering techniques.
● Co-packaged HEXFET® power MOSFET and Schottky diode
● Ideal for buck regulator applications
● Low VF Schottky rectifier
Infineon
11 Pages / 0.19 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
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