| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.105 Ω |
| Polarity | P-CH |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 3.4A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 690pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7342PBF is a -55V dual P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Surface mount
● Dynamic dV/dt rating
Infineon
7 Pages / 0.15 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
8 Pages / 0.11 MByte
International Rectifier
MOSFET 2P-CH 55V 3.4A 8-SOIC
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -55V; RDS(ON) 0.105Ω; ID -3.4A; SO-8; PD 2W; VGS +/-20
International Rectifier
Trans MOSFET P-CH 55V 3.4A 8Pin SOIC Tube
International Rectifier
Trans MOSFET P-CH 55V 3.4A 8Pin SOIC
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
