TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Channels | 2 Channel |
Polarity | P-CH |
Power Dissipation | 2 W |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55 V |
Continuous Drain Current (Ids) | 3.4A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 690pF @25V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 22 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Discontinued at Digi-Key |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Mosfet Array 2 P-Channel (Dual) 55V 3.4A 2W Surface Mount 8-SO
Infineon
8 Pages / 0.17 MByte
Infineon
3 Pages / 0.63 MByte
International Rectifier
MOSFET 2P-CH 55V 3.4A 8-SOIC
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -55V; RDS(ON) 0.105Ω; ID -3.4A; SO-8; PD 2W; VGS +/-20
International Rectifier
Trans MOSFET P-CH 55V 3.4A 8Pin SOIC Tube
International Rectifier
Trans MOSFET P-CH 55V 3.4A 8Pin SOIC
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