| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Current Rating | 4.70 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 50 mΩ |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 2 W |
| Part Family | IRF7343 |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 4.70 A |
| Thermal Resistance | 62.5℃/W (RθJA) |
| Input Capacitance (Ciss) | 740pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Size-Length | 5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
● Generation V Technology
● Ultra Low On-Resistance
● Dual N and P Channel MOSFET
● Surface Mount
● Fully Avalanche Rated
● Lead Free
International Rectifier
10 Pages / 0.21 MByte
International Rectifier
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8Pin SOIC
International Rectifier
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8Pin SOIC Tube
International Rectifier
Transistor: N/P-MOSFET x2; unipolar; HEXFET; 55V; 4.7A; 2W; SO8
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