TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2 W |
Number of Channels | 2 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.061 Ω |
Polarity | N-Channel, Dual N-Channel |
Power Dissipation | 2 W |
Part Family | IRF7380 |
Threshold Voltage | 4 V |
Input Capacitance | 660 pF |
Drain to Source Voltage (Vds) | 80 V |
Breakdown Voltage (Drain to Source) | 80 V |
Continuous Drain Current (Ids) | 3.60 A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 660pF @25V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 17 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Fully Characterized Avalanche Voltage and Current
● Low Gate-to-Drain Charge to Reduce Switching Losses
● Fully Characterized Capacitance Including Effective Coss to Simplify Design
● Dual N-Channel MOSFET
Infineon
8 Pages / 0.22 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.04 MByte
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