| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.05 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 700 mV |
| Input Capacitance | 650pF @15V |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 6.8A |
| Rise Time | 47 ns |
| Input Capacitance (Ciss) | 650pF @15V(Vds) |
| Fall Time | 32 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
8 Pages / 0.17 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
9 Pages / 0.17 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
MOSFET, 20V, 6.8A, 35MOHM, 14NC QG, SO-8
International Rectifier
Trans MOSFET N-CH 20V 6.8A 8Pin SOIC T/R
International Rectifier
MOSFET N-CH 20V 6.8A 8-SOIC
International Rectifier
20V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
