| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.04 Ω |
| Polarity | P-CH |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 700 mV |
| Input Capacitance | 1500 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 6.7A |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 1500pF @15V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 65 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7404TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
● Generation V technology
● Dynamic dV/dt rating
● Fast switching
● Low static drain-to-source ON-resistance
● Fully avalanche rating
Infineon
9 Pages / 0.22 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
8 Pages / 0.11 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
Trans MOSFET P-CH 20V 6.7A 8Pin SOIC
ADI
Thermoelectric Cooler Controller
International Rectifier
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.04Ω; ID -6.7A; SO-8; PD 2.5W; VGS +/-12V
International Rectifier
Trans MOSFET P-CH 20V 6.7A 8Pin SOIC Tube
International Rectifier
Trans MOSFET P-CH 20V 6.7A 8Pin SOIC T/R
International Rectifier
MOSFET, P-CHANNEL, -20V, -6.7A, 40MOHM, 33.3NC QG, SO-8, Q101 QUALIFIED
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
