TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.045 Ω |
Polarity | P-Channel |
Power Dissipation | 1.6 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 5.8A |
Rise Time | 33 ns |
Input Capacitance (Ciss) | 1100pF @25V(Vds) |
Fall Time | 47 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7406PBF is a -30V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
● Surface mount
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