| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOIC-8 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
Description
●These HEXFET® Power MOSFET"s in SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET"s are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
●Advanced Process Technology
●Ultra Low On-Resistance
●N Channel MOSFET
●Surface Mount
●Available in Tape & Reel
●150°C Operating Temperature
●Lead-Free
International Rectifier
9 Pages / 0.23 MByte
International Rectifier
Trans MOSFET N-CH 30V 13A 8Pin SOIC
International Rectifier
Trans MOSFET N-CH 30V 13A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH Si 30V 13A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 8 Milliohms; ID 13A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 30V 13A 8Pin SOIC T/R
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