| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SO-8 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 20 mΩ |
| Polarity | P-CH |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.04 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 10A |
| Rise Time | 49 ns |
| Input Capacitance (Ciss) | 1700pF @25V(Vds) |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
P-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO
Infineon
9 Pages / 0.23 MByte
Infineon
2 Pages / 0.09 MByte
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC
IRF
Power MOSFET(Vdss=-30V, Rds(on)=0.02Ω)
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.02Ω; ID -10A; SO-8; PD 2.5W; VGS +/-20V; -55
International Rectifier
MOSFET P-CH 30V 10A 8-SOIC
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC T/R
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