| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -10.0 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 0.035 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Part Family | IRF7416 |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | -30.0 V |
| Continuous Drain Current (Ids) | -10.0 A |
| Rise Time | 49.0 ns |
| Input Capacitance (Ciss) | 1700pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●P-Channel Power MOSFET over 8A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
1 Pages / 0.71 MByte
International Rectifier
10 Pages / 0.26 MByte
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC
IRF
Power MOSFET(Vdss=-30V, Rds(on)=0.02Ω)
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.02Ω; ID -10A; SO-8; PD 2.5W; VGS +/-20V; -55
International Rectifier
MOSFET P-CH 30V 10A 8-SOIC
International Rectifier
Trans MOSFET P-CH 30V 10A 8Pin SOIC T/R
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