| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0135 Ω |
| Polarity | P-CH |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.5 V |
| Input Capacitance | 4030 pF |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 11A |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 4030pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 76 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7424TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering technique.
● Industry standard pin-out
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