TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 90 mΩ |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 5.5 V |
Input Capacitance | 990 pF |
Drain to Source Voltage (Vds) | 150 V |
Breakdown Voltage (Drain to Source) | 150 V |
Continuous Drain Current (Ids) | 3.6A |
Rise Time | 4.2 ns |
Input Capacitance (Ciss) | 990pF @25V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 15 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fully Characterized Avalanche Voltage and Current
● Low Gate-to-Drain Charge to Reduce Switching Losses
● Fully Characterized Capacitance Including Effective Coss to Simplify Design
Infineon
9 Pages / 0.12 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.14 MByte
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1 Pages / 0.13 MByte
International Rectifier
MOSFET N-CH 150V 3.6A 8-SOIC
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.09Ω, Id=3.6A)
International Rectifier
Trans MOSFET N-CH 150V 3.6A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 150V 3.6A 8Pin SOIC
International Rectifier
MOSFET N-CH 150V 3.6A 8-SOIC
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