| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 5.5 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 4.5A |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 930pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7452PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
8 Pages / 0.27 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
International Rectifier
MOSFET N-CH 100V 4.5A 8-SOIC
IRF
Power MOSFET(Vdss=100V, Rds(on)max=0.06Ω, Id=4.5A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.06Ω; ID 4.5A; SO-8; PD 2.5W; VGS +/-30V; -55
International Rectifier
Trans MOSFET N-CH 100V 4.5A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 100V 4.5A 8Pin SOIC T/R
International Rectifier
MOSFET N-CH 100V 4.5A 8-SOIC
International Rectifier
Trans MOSFET N-CH 100V 4.5A 8Pin SOIC
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