| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.28 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 5.5 V |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 1.9A |
| Rise Time | 1.2 ns |
| Input Capacitance (Ciss) | 330pF @25V(Vds) |
| Fall Time | 9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Rail, Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7465PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency DC-to-DC converters.
● Low gate-to-drain charge to reduce switching losses
● Fully characterized capacitance including effective COSS to simplify design
Infineon
8 Pages / 0.12 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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12 Pages / 0.56 MByte
International Rectifier
MOSFET N-CH 150V 1.9A 8-SOIC
IRF
Power MOSFET(Vdss=150V, Id=1.9A)
International Rectifier
Trans MOSFET N-CH 150V 1.9A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 150V 1.9A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH 150V 1.9A 8Pin SOIC T/R
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