| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | µSOIC |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.135 Ω |
| Polarity | N-CH |
| Power Dissipation | 1.25 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 2.4A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRF7503PBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
● Generation V technology
● Ultra low ON-resistance
● Low profile
● Fast switching performance
Infineon
8 Pages / 0.98 MByte
Infineon
9 Pages / 0.2 MByte
International Rectifier
Trans MOSFET N-CH Si 30V 2.4A 8Pin Micro
IRF
Power MOSFET(Vdss=30V, Rds(on)=0.135Ω)
International Rectifier
Trans MOSFET N-CH 30V 2.4A 8Pin Micro T/R
International Rectifier
Trans MOSFET N-CH Si 30V 2.4A 8Pin Micro T/R
Infineon
Trans MOSFET N-CH 30V 2.4A 8Pin Micro Tube
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