| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Micro-8 |
| Power Rating | 1.8 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.035 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.8 W |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 5.7A |
| Rise Time | 47 ns |
| Input Capacitance (Ciss) | 650pF @15V(Vds) |
| Fall Time | 32 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.8W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 3.05 mm |
| Size-Width | 3.05 mm |
| Size-Height | 0.91 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7601PBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
● Generation V technology
● Ultra-low ON-resistance
● Low profile (<1.1mm)
● Fast switching
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Fully avalanche rating
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