TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | Micro-8 |
Power Rating | 1.8 W |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.09 Ω |
Polarity | P-CH |
Power Dissipation | 1.8 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 20 V |
Continuous Drain Current (Ids) | 3.6A |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 520pF @25V(Vds) |
Fall Time | 39 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1800 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 3 mm |
Size-Width | 3 mm |
Size-Height | 1.11 mm |
The IRF7606PBF is a HEXFET® P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
● Generation V technology
● Ultra-low ON-resistance
● Low profile (<1.1mm)
● Fast switching
Infineon
8 Pages / 0.12 MByte
Infineon
4 Pages / 0.2 MByte
Infineon
5 Pages / 0.08 MByte
International Rectifier
-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package
IRF
Power MOSFET(Vdss=-30V, Rds(on)=0.09Ω)
International Rectifier
Trans MOSFET P-CH 30V 3.6A 8Pin Micro T/R
International Rectifier
MOSFET P-CH 30V 3.6A MICRO8
IRF
MOSFET P-CH 30V 3.6A MICRO8
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