| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 5 Pin |
| Case/Package | Direct-FET |
| Number of Positions | 5 Position |
| Drain to Source Resistance (on) (Rds) | 0.009 Ω |
| Polarity | N-CH |
| Power Dissipation | 125 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 67A |
| Input Capacitance (Ciss) | 6660pF @25V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Size-Length | 9.15 mm |
| Size-Width | 7.1 mm |
| Size-Height | 0.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF7779L2TR1PBF is a DirectFET™ N-channel Power MOSFET ideal for high performance isolated converter and primary switch socket. It combines the latest HEXFET® power MOSFET silicon technology with the advanced DirectFET™ packaging to achieve the lowest ON-state resistance in a package. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infrared or convection soldering techniques. It allows dual sided cooling to maximize thermal transfer in power systems. It is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements and makes this device ideal for high performance power converters.
● Low conduction losses
● High CdV/dt immunity
● Dual-sided cooling compatible
● Compatible with existing surface-mount techniques
Infineon
11 Pages / 0.25 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
6 Pages / 0.12 MByte
International Rectifier
MOSFET 150V 67A 11mOhm 97NC Qg
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