| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.025 Ω |
| Polarity | N-CH |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 8.3A |
| Rise Time | 17 ns |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 2.5W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Operating Temperature | -55℃ ~ 150℃ |
The IRF7807PBF is a HEXFET® single N-channel Power MOSFET to achieve an unprecedented balance of ON-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-to-DC converters that power the latest generation of mobile microprocessors.
● Low conduction losses
● Low switching losses
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8 Pages / 0.19 MByte
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37 Pages / 2.01 MByte
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