| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 3.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.011 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 10.8A |
| Rise Time | 21 ns |
| Input Capacitance (Ciss) | 1801pF @10V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7811AVPBF is a HEXFET® single N-channel Power MOSFET designed for vapour phase, infrared, convection or wave soldering techniques. This new device employs advanced HEXFET® power MOSFET technology to achieve an unprecedented balance of ON-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-to-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS (ON), gate charge and CdV/dt-induced turn-ON immunity. It offers an extremely low combination of Qsw and RDS (ON) for reduced losses in both control and synchronous FET applications. Power dissipation of greater than 2W is possible in a typical PCB mount application.
● Low conduction losses
● Low switching losses
● 100% Rg tested
● Fast switching
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