| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0036 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.35 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 21A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 6240pF @15V(Vds) |
| Fall Time | 5.3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Rail, Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7831PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency point-of-load synchronous buck converter for applications in networking system.
● Ultra-low gate impedance
● Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
● 100% Rg tested
Infineon
10 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
12 Pages / 0.56 MByte
International Rectifier
Dual N-Channel MOSFET, Vdss = 30V, Rds = 3.6mΩ@Vgs = 10V, Id = 21A, SOIC8핀 패키지
International Rectifier
Trans MOSFET N-CH 30V 21A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 21A 8Pin SOIC Tube
International Rectifier
MOSFET N-CH 30V 21A 8-SOIC
Infineon
Trans MOSFET N-CH 30V 21A 8Pin SOIC T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
