| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0037 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 5.4 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 21A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 4090pF @15V(Vds) |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
The IRF7862PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for battery protection, high side and low side load switch, notebook processor power and isolated DC-to-DC converters.
● Ultra-low gate impedance
● Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
● 100% Rg tested
● 20V VGS Maximum gate rating
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