| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-262 |
| Power Rating | 260 W |
| Drain to Source Resistance (on) (Rds) | 0.015 Ω |
| Polarity | N-CH |
| Power Dissipation | 260 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 80A |
| Rise Time | 130 ns |
| Input Capacitance (Ciss) | 3830pF @25V(Vds) |
| Fall Time | 120 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 260 W |
| TYPE | DESCRIPTION |
|---|
| Size-Height | 10.54 mm |
The IRF8010LPBF is a HEXFET® N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
11 Pages / 0.21 MByte
Infineon
10 Pages / 0.21 MByte
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