| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 260 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.015 Ω |
| Polarity | N-Channel |
| Power Dissipation | 260 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 3830pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 80A |
| Rise Time | 130 ns |
| Input Capacitance (Ciss) | 3830pF @25V(Vds) |
| Input Power (Max) | 260 W |
| Fall Time | 120 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 260000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 15.24 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF8010PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
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