| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SO-8 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 5.6 mΩ |
| Polarity | N-CH |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.2 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 17.2A |
| Rise Time | 8.9 ns |
| Input Capacitance (Ciss) | 2910pF @15V(Vds) |
| Fall Time | 3.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 30V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO
Infineon
10 Pages / 0.27 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
5 Pages / 0.08 MByte
International Rectifier
MOSFET N-CH 30V 17.2A 8-SOIC
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.7Milliohms; ID 17.2A; SO-8; PD 2.5W; VGS +/-2
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.7Milliohms; ID 17.2A; SO-8; PD 2.5W; VGS +/-2
International Rectifier
Trans MOSFET N-CH 30V 17.2A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 17.2A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 17.2A 8Pin SOIC
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