TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 16.6 A |
Case/Package | SOIC-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 5.6 mΩ |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Part Family | IRF8113 |
Threshold Voltage | 2.2 V |
Input Capacitance | 2910 pF |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 17.2 A |
Rise Time | 8.9 ns |
Input Capacitance (Ciss) | 2910pF @15V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 3.5 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5 mm |
Size-Width | 3.9 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Low RDS(ON) at 4.5V VGS
● Fully Characterized Avalanche Voltage and Current
● Ultra-Low Gate Impedance
Infineon
10 Pages / 0.21 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
11 Pages / 0.21 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
MOSFET N-CH 30V 17.2A 8-SOIC
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.7Milliohms; ID 17.2A; SO-8; PD 2.5W; VGS +/-2
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 4.7Milliohms; ID 17.2A; SO-8; PD 2.5W; VGS +/-2
International Rectifier
Trans MOSFET N-CH 30V 17.2A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 17.2A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 17.2A 8Pin SOIC
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