| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 3 Ω |
| Polarity | N-Channel |
| Power Dissipation | 50 W |
| Threshold Voltage | 4.5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 2.50 A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 340pF @25V(Vds) |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 50 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRF820APBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge.
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance and Avalanche voltage and current
● Effective COSS specified
Vishay Semiconductor
8 Pages / 0.22 MByte
Vishay Semiconductor
20 Pages / 2.6 MByte
Vishay Semiconductor
3 Pages / 0.14 MByte
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