| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.002 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 25 V |
| Continuous Drain Current (Ids) | 25A |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 5305pF @13V(Vds) |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF8252PBF is a HEXFET® single N-channel Power MOSFET housed in an industry standard package. It has been optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-to-DC converters that power the latest generation of processors for notebook and Netcom applications. It is also suitable for battery protection, high side and low side load switch.
● Silicon technology
● Very low gate charge
● Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
● Ultra-low gate impedance
● Fully characterized avalanche voltage and current
● 100% Rg tested
● Low thermal resistance
● Halogen-free
● 20V VGS Maximum gate rating
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