| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 4.50 A |
| Case/Package | TO-220-3 |
| Power Dissipation | 100 W |
| Input Capacitance | 610 pF |
| Gate Charge | 30.0 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 4.50 A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 610pF @25V(Vds) |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 100W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
DESCRIPTION
●This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
●■ TYPICAL RDS(on)= 1.35Ω
●■ EXTREMELY HIGH dv/dt CAPABILITY
●■ 100% AVALANCHE TESTED
●■ VERY LOW INTRINSIC CAPACITANCES
●■ GATE CHARGE MINIMIZED
ST Microelectronics
8 Pages / 0.27 MByte
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