IRF830 Datasheet PDF - Vishay Siliconix

Manufacturer:	Vishay Siliconix
Category:	MOSFETs
Case Package:	TO-220-3
Description:	MOSFET N-CH 500V 4.5A TO-220AB
Documentation:	IRF830 Datasheet (8 Pages)Package Outline Dimension on7 Page Part Numbering System on1 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IRF830 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Voltage Rating (DC)	500 V
Current Rating	4.50 A
Case/Package	TO-220-3
Drain to Source Resistance (on) (Rds)	1.50 Ω
Polarity	N-Channel
Power Dissipation	74W (Tc)
Input Capacitance	610 pF
Gate Charge	38.0 nC
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500V (min)
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	4.50 A
Rise Time	16.0 ns
Input Capacitance (Ciss)	610pF @25V(Vds)
Power Dissipation (Max)	74W (Tc)