TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 500 V |
Current Rating | 5.00 A |
Case/Package | TO-220 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.4 Ω |
Polarity | N-Channel |
Power Dissipation | 74 W |
Threshold Voltage | 4.5 V |
Input Capacitance | 620pF @25V |
Gate Charge | 24.0 nC |
Drain to Source Voltage (Vds) | 500 V |
Breakdown Voltage (Drain to Source) | 500 V |
Continuous Drain Current (Ids) | 5.00 A |
Rise Time | 21.0 ns |
Input Capacitance (Ciss) | 620pF @25V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 74 W |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 10.41 mm |
Size-Width | 4.7 mm |
Size-Height | 9.01 mm |
Operating Temperature | -55℃ ~ 150℃ |
The IRF830APBF is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS, uninterruptable power supply and high speed power switching.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● 150°C Operating temperature
● Easy to parallel
● Simple drive requirement
Vishay Semiconductor
9 Pages / 1.13 MByte
Vishay Semiconductor
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Vishay Semiconductor
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