| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-262-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.85 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.1 W |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 8.00 A |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 1018pF @25V(Vds) |
| Input Power (Max) | 3.1 W |
| Fall Time | 19 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 1000 |
The IRF840ALPBF is a HEXFET® N-channel Power MOSFET offers low gate charge Qg results in simple drive requirement. It is suitable for high speed power switching.
● Improved gate, avalanche and dynamic dV/dt ruggedness
● Fully characterized capacitance, avalanche voltage and current
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