| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.7 Ω |
| Polarity | N-Channel |
| Power Dissipation | 156 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 4.5A |
| Rise Time | 16 ns |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ |
| Minimum Packing Quantity | 50 |
Amplify electronic signals and switch between them with the help of Vishay"s IRF840BPBF power MOSFET. Its maximum power dissipation is 156000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
VISHAY
8 Pages / 0.27 MByte
VISHAY
11 Pages / 0.65 MByte
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