TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0119 Ω |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Part Family | IRF8707 |
Threshold Voltage | 1.8 V |
Input Capacitance | 760pF @15V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 11.0 A |
Input Capacitance (Ciss) | 760pF @15V(Vds) |
Input Power (Max) | 2.5 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 5 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ |
Description
●The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are critical in synchronous buck operationincluding Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.
●Benefits
●Very Low Gate Charge
●Very Low RDS(on) at 4.5V VGS
●Ultra-Low Gate Impedance
●Fully Characterized Avalanche Voltage and Current
●20V VGS Max. Gate Rating
●100% tested for Rg
●Lead-Free
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