| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0085 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.35 V |
| Input Capacitance | 1040pF @15V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 14A |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 1040pF @15V(Vds) |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF8721PBF is a HEXFET® single N-channel Power MOSFET optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The latest HEXFET® power MOSFET silicon technology into the industry standard package. The reduced total losses make this product ideal for high efficiency DC-to-DC converters that power the latest generation of processors for Notebook and Netcom applications.
● Very low gate charge
● Low gate impedance
● Fully characterized avalanche voltage and current
● Low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
● 20V VGS Maximum gate rating
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