| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 3.9 mΩ |
| Polarity | P-CH |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 20A |
| Rise Time | 47 ns |
| Input Capacitance (Ciss) | 5250pF @15V(Vds) |
| Fall Time | 70 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 4.98 mm |
| Size-Width | 3.99 mm |
| Size-Height | 1.57 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF9310PBF is a -30V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology.
● Low RDS (ON) (
● Lower conduction losses
● Environmentally-friendly
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