| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 48 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.48 Ω |
| Polarity | P-CH |
| Power Dissipation | 48 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 6.8A |
| Rise Time | 47 ns |
| Input Capacitance (Ciss) | 350pF @25V(Vds) |
| Fall Time | 31 ns |
| Operating Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The IRF9520NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Advanced process technology
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rated
● 175°C Operating temperature
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