| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220-3 |
| Power Dissipation | 60000 mW |
| Rise Time | 29 ns |
| Input Capacitance (Ciss) | 390pF @25V(Vds) |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 60W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
P-Channel 100V 6.8A (Tc) 60W (Tc) Through Hole TO-220AB
Vishay Siliconix
9 Pages / 0.26 MByte
Vishay Siliconix
9 Pages / 0.26 MByte
Vishay Siliconix
1 Pages / 0.13 MByte
International Rectifier
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Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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