| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -6.80 A |
| Case/Package | TO-220-3 |
| Power Rating | 60 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.6 Ω |
| Polarity | P-Channel |
| Power Dissipation | 40 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | -100 V |
| Continuous Drain Current (Ids) | -6.80 A |
| Rise Time | 29 ns |
| Input Capacitance (Ciss) | 390pF @25V(Vds) |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout the industry.
● Dynamic dv/dt rating
● Repetitive avalanche rated
● Fast switching
● Ease of paralleling
● Simple drive requirements
● ±20V Gate to source voltage
● 2.5°C/W Thermal resistance, junction to case
● 62°C/W Thermal resistance, junction to ambient
Vishay Semiconductor
9 Pages / 0.26 MByte
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Vishay Semiconductor
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