| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.6 Ω |
| Polarity | P-Channel |
| Power Dissipation | 3.7 W |
| Drain to Source Voltage (Vds) | -100 V |
| Continuous Drain Current (Ids) | -6.80 A |
| Rise Time | 29 ns |
| Input Capacitance (Ciss) | 390pF @25V(Vds) |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3700 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 8.81 mm |
| Size-Height | 4.69 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IRF9520SPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● -55 to 175°C Operating temperature range
● Surface-mount
● Halogen-free
Vishay Semiconductor
8 Pages / 0.13 MByte
Vishay Semiconductor
9 Pages / 0.16 MByte
Vishay Semiconductor
3 Pages / 0.06 MByte
International Rectifier
Trans MOSFET P-CH Si 100V 6A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET P-CH 100V 6A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 100V 6A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 100...
Vishay Siliconix
MOSFET P-CH 100V 6.8A TO-220AB
VISHAY
Trans MOSFET P-CH 100V 6.8A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 100V 6.8A 3Pin(3+Tab) TO-220AB
Harris
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild
Trans MOSFET P-CH Si 100V 6A 3Pin(3+Tab) TO-220AB
Infineon
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
