TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Drain to Source Resistance (on) (Rds) | 600 mΩ |
Polarity | P-CH |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 6.8A |
Rise Time | 29 ns |
Input Capacitance (Ciss) | 390pF @25V(Vds) |
Input Power (Max) | 3.7 W |
Fall Time | 25 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3700 mW |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Minimum Packing Quantity | 2000 |
VISHAY
12 Pages / 0.35 MByte
VISHAY
11 Pages / 0.31 MByte
International Rectifier
Trans MOSFET P-CH Si 100V 6A 3Pin(3+Tab) TO-220AB
Intersil
Trans MOSFET P-CH 100V 6A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 100V 6A 3Pin(3+Tab) TO-220AB Trans MOSFET P-CH 100...
Vishay Siliconix
MOSFET P-CH 100V 6.8A TO-220AB
VISHAY
Trans MOSFET P-CH 100V 6.8A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 100V 6.8A 3Pin(3+Tab) TO-220AB
Harris
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild
Trans MOSFET P-CH Si 100V 6A 3Pin(3+Tab) TO-220AB
Infineon
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Power Field-Effect Transistor, 6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.