| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -100 V |
| Current Rating | -12.0 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 300 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 88W (Tc) |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 52.0 ns |
| Input Capacitance (Ciss) | 860pF @25V(Vds) |
| Power Dissipation (Max) | 88W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
●Vishay IRF Series Power MOSFETs
●Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
●Features:
● Fast Switching
● P-Channel
● Dynamic dV/dt Rating
● Compliant to RoHS Directive 2002/95/EC
● Ease of Paralleling
Vishay Siliconix
9 Pages / 0.26 MByte
Vishay Siliconix
8 Pages / 0.27 MByte
Vishay Siliconix
9 Pages / 0.22 MByte
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