| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-262-3 |
| Power Rating | 140 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.117 Ω |
| Polarity | P-Channel |
| Power Dissipation | 3.1 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 23A |
| Rise Time | 67 ns |
| Input Capacitance (Ciss) | 1450pF @25V(Vds) |
| Fall Time | 51 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF9540NLPBF is a HEXFET® single P-channel Power MOSFET offers fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
● Advanced process technology
● Ultra-low ON-resistance
● Fast switching
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Fully avalanche rating
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