| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 3.8 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.117 Ω |
| Polarity | P-Channel |
| Power Dissipation | 140 W |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 23A |
| Rise Time | 67 ns |
| Input Capacitance (Ciss) | 1450pF @25V(Vds) |
| Input Power (Max) | 3.1 W |
| Fall Time | 51 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF9540NSPBF is a -100V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
● Advanced process technology
● Ultra low on-resistance
● Fast switching
● Repetitive avalanche allowed up to Tjmax
● 150°C Operating temperature
Infineon
11 Pages / 0.31 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
9 Pages / 0.14 MByte
International Rectifier
100V 19A Single P Channel HEXFET Power MOSFET SO
Intersil
19A, 100V, 0.2Ω, P-Channel Power MOSFETs
VISHAY
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
Trans MOSFET P-CH 100V 19A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET P-CH Si 100V 19A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET P-CH 100V 19A TO-220AB
Samsung
100V, P-channel power MOSFET
Vishay Intertechnology
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Infineon
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
